| PART |
Description |
Maker |
| DD750S65K3 |
Bare Die IGBT
|
Infineon Technologies AG
|
| TLE6250GV3 TLE6250C TLE6250CV33 TLE6250G TLE6250GV |
Stand alone - High Speed CAN Transceiver for 3.3V micro Controller (Bare Die)
Stand alone - High Speed CAN Transceiver (Bare Die)
CAN-Transceiver
|
INFINEON[Infineon Technologies AG]
|
| S2308 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S2206 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| IRG4CC50WB |
IGBT Die in Wafer Form 600 V Size 5 WARP Speed
IRG4CC50WB IGBT Die in Wafer Form
|
Hittite Microwave Corporation
International Rectifier
|
| S4108 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S6201 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| S2206 S2206-16 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| ELC-660-23-1 |
LED bare chip die
|
Roithner LaserTechnik G...
|
| 5SMX12N4507 |
IGBT-Die 40 A, 4500 V, N-CHANNEL IGBT
|
ABB, Ltd.
The ABB Group
|
| 5SMX12E1273 |
IGBT-Die
|
The ABB Group
|
